Multi - Band Model of Resonant Tunneling Diodes With

نویسنده

  • Boris Gelmont
چکیده

Public Reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comment regarding this burden estimates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188,) Washington, DC 20503. 1. AGENCY USE ONLY ( Leave Blank) 2. REPORT DATE 5/1/02 3. REPORT TYPE AND DATES COVERED Final Progress Report 4/15/99-4/14/02 4. TITLE AND SUBTITLE Nanostructures for Very High Frequency Electronics 5. FUNDING NUMBERS G NO. DAAD19-19-1-0131

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Theoretical studies of the applications of resonant tunneling diodes as intersubband laser and interband excitonic modulators

We present a theoretical analysis of the optical applications of resonant tunneling diodes. The electronic properties are calculated with a self-consistent traveling-wave model that includes effective-mass mismatches. The interband optical properties are calculated from a 4x4 k-p band structure in the dipole approximation. We fmd that it is possible to operate a conventional device as an inters...

متن کامل

Room Temperature Operation of Gasb‐based Resonant Tunneling Diodes by Prewell Injection

We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...

متن کامل

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Related Articles Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach Appl. Phys. Lett. 100, 062403 (2012) Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing Appl. Phys. Lett. 100, 063504 (2012) Degenerate p-doping of InP nanowires for large area tunnel diodes Appl. Phys. Lett. 99, 25...

متن کامل

Simulation of Resonant Tunneling Diodes Using ATLAS

This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations with an effective mass Hamiltonian. Simulation results are presented for generic GaAs and SiGe RTDs.

متن کامل

A Model for Cu-Se Resonant Tunneling Diodes Fabricated by Negative Template Assisted Electrodeposition Technique

In this paper, the authors present and discuss a model for Cu-Se nano resonant tunneling diodes (RTDs) fabricated by negative template assisted electrodeposition technique and formulate the mathematical equations for it. The model successfully explains the experimental findings.

متن کامل

Electron transport through cubic InGaN/AlGaN resonant tunneling diodes

We theoretically study the electron transport through a resonant tunneling diode (RTD) based on strained AlxGa1−xN/In0.1Ga0.9N/AlxGa1−xN quantumwells embedded in relaxed n-Al0.15Ga0.85N/strained In0.1Ga0.9N emitter and collector. The aluminum composition in both injector and collector contacts is taken relatively weak; this does not preclude achieving a wide band offset at the border of the pre...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002